Fig. 3: FMR-driven spin-pumping and ISHE measurements.

a Schematic of the sample structure for FMR-driven spin-pumping and ISHE measurements. b Voltage drop detected in FMR-spin-pumping experiments for the Mn₃Sn(40 nm)/Py(12 nm) sample at 10 GHz and 300 K. Decompensation of the measured voltage in terms of its field-symmetric (V_sym ≅ V_ISHE) and antisymmetric (V_as) parts, displayed for positive and negative magnetic field polarities. The dashed gray lines represent the fit using Eq. (4), whereas the solid blue and green lines represent the symmetric and antisymmetric contributions, respectively. c Detected voltage drops (scattered points) along the \(\left[01\bar{1}0\right]\) and \(\left[2\bar{1}\bar{1}0\right]\) crystallographic directions of Mn₃Sn, highlighting the quasi-isotropic magnitude and similar sign of V_sym (solid lines).