Fig. 2: Electrical measurements of the proposed 1T1R ePCM.
From: 28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs
a The voltage-based pulse programming scheme employed to progressively span the entire ePCM resistance window, transitioning from LRS to HRS. b The corresponding resistance evolution (read at 0.1 V) over a sequence consisting of 10 SET pulses of 1.5 V and 10 RESET pulses starting at 1.8 V and ending at 2.7 V. This sequence is repeated 10 times for a total of 200 pulses for each VWL bias from 0.8 V to 1.3 V at 300 K, (c) 77 K, and (d) 12 K. The magnified view of the ePCM response to one SET and RESET sequence is shown for (e) 300 K, (f) 77 K, and (g) 12 K.
