Fig. 2: Electrical and structural characterizations of OECTs. | npj Soft Matter

Fig. 2: Electrical and structural characterizations of OECTs.

From: Sharp subthreshold switching in interface-modified organic electrochemical transistors for millivolt-level signal sensing

Fig. 2

a Transfer characteristics of OECTs with (red curve) and without (blue curve) the LB layer. Vd was − 0.01 V and Vg was swept by 0.05 V per 15 min. b SS extracted as a function of Id for the devices with (red plot) and without (blue plot) the LB layer. c Operational stability of the OECTs under Vg of − 0.475 V and Vd of − 0.01 V for the devices with (red curve) and without (blue curve) the LB layer. The right axis indicates the threshold voltage shift, calculated assuming an SS of 60 mV dec−1. d Out-of-plane XRD spectra of OECTs before operation (pristine, black curve), after applying Vg of − 0.4 V for 1 h (doped, red curve), and after subsequent application of Vg of 0 V for 1 h (dedoped, blue curve).

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