Table 1 Comparison of subthreshold swings and threshold voltage drifts in OECTs

From: Sharp subthreshold switching in interface-modified organic electrochemical transistors for millivolt-level signal sensing

Active material

SS (mV dec−1)

Vth drift (mV h−1)

PII2T-Si42

≈100

0.83

p(g2T-TT)43

≈60

7.8

IDTBT44

≈200

9.3

p(g3T2)5

≈100

25

LB-modified PBTTT (this work)

40-60

0.18

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