Figure 2 | Scientific Reports

Figure 2

From: Direct Transformation of Amorphous Silicon Carbide into Graphene under Low Temperature and Ambient Pressure

Figure 2

(a) CV plots of SiC-CDC nanoparticles treated by ECE technique under a voltage of 0.98 V over different periods (0.5 M H2SO4, scan rate: 50 mVs−1). (b) The oxidation peak areas were quantitatively obtained by integrating the region enclosed by the cathode scan curve above the double layer charge region. (c), (d) and (e) are the HRTEM images of the SiC-CDC nano-particles after 24 h, 48 h and 72 h ECE treatment, respectively. (f) Magnified image of the circled area in (e). The presence of the WG is clearly evident after 72 h ECE technique.

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