Figure 6
From: Physical electro-thermal model of resistive switching in bi-layered resistance-change memory
Simulation results for the set transition.
(a) Calculated map of Vo density (nD). Calculated profiles of (b) nD, (c) E and (d) G for states D (−0.25 V), E (−1.5 V) and F (−0.25 V), as depicted in Fig. 4(b).
