Figure 5
From: Fabrication of [001]-oriented tungsten tips for high resolution scanning tunneling microscopy
25×25 Å2 STM images of the SiC(001)-c(2×2) (a) and SiC(001)-(3×2) (b) surfaces. (c and d) The corresponding cross-sections 1–2 and 3–4 taken from the images in panels (a) and (b). (e) A 16×9 nm2 STM image revealing single atomic defect (highlighted by white circle) and carbon atomic chains on the SiC(001)-c(2×2) reconstruction. 15×10 nm2 (f) and 15×15 Å2 (g) STM images of the graphene/SiC(001) system measured with the same tip. The tunneling parameters are: U = −3 V, I = 60 pA (a and e); U = −3 V, I = 70 pA (b); U = 50 mV, I = 60 pA (e); and U = 50 mV, I = 60 pA (f). All images were measured with the W[001] tip shown in Fig. 3.
