Figure 4
From: Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures
The photoresponse property of p-Si/MoS2 heterostructures.
(a) The I–V curves of p-Si/MoS2 heterostructures upon illumination with different power densities in a range of 4 to 50 mW/cm2 with light wavelength of 365 nm. The reverse current increased by increasing power density, yet it did not saturate. (b) The photocurrent and responsivity as a function of power density at light wavelength of 365 nm. The photocurrent was linear with power density, while the responsivity decreased rapidly with power density. (c) The band alignment at the interface between p-Si and monolayer MoS2 at equilibrium, forward bias and reverse bias upon illumination. Similar to the case of n-Si/MoS2, the excitons in MoS2 could be separated effectively at the interface in the reverse bias.
