Figure 1

(a)~(e) The typical SEM images illustrating the deformed individual Si tip emitter in sequence following the increase of the applied field. The cathode-to-anode separation is 500 nm. (f) The typical TEM image of a Si nano-apex with a whisker on top; the inset is the corresponding EDX spectra of the apex. (g) The typical SAED image of the nano-whisker. (h) The typical SAED image of the bulk of the Si tip. (i) The typical field emission I-E characteristics of the individual tips in the 500 nm cathode-to-anode separation tests. The inset is the corresponding F-N plots. (j)~(l) The typical SEM images showing the deformed Si tip in sequence following the increase of the applied field. The cathode-to-anode separation is 100 nm. (m) The typical field emission I-E characteristics and the corresponding F-N plots of the 3 tested tips in the 100 nm cathode-to-anode separation tests.