Figure 1
From: Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions
The transport characteristics of the p-n junctions modulated by the magnetic field.
(a) The p-n junction device structure and its measurement (b) Schematic illustration of the origin of the MR effect in p-n junctions due to the change of the space charge region tuned by magnetic field. Without the magnetic field a uniform distribution in space-charge region is formed, while under magnetic field a trapezoidal distribution of space charger region is formed due to the Lorentz force and the current trajectory are deflected toward the lower barriers. The corresponding I-V curves of the p-n junctions under the magnetic field H = 2 T with angle θ from 0° to 90° at 293 K (c) and 140 K (d), demonstrating the significant temperature-dependent anisotropic MR effect.
