Figure 4
From: Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions
Interpretation of the observed asymmetric anisotropic MR due to the current deflection.
(a) The vector diagram presented the forces equilibrium acting on the carriers under the magnetic field. For the conventional metal and semiconductor, the current trajectory keeps constant due to the adjustment of the electric field. (b) For the p-n junctions, the current trajectory is deflected due to the geometry of space charge region, as shown in the solid lines. (c–e) The schematic illustration of the current deflection in p-n junction and corresponding typical anisotropic MR curves for various temperature. With temperature decreasing, the space charge region is more efficiently affected by the magnetic field, thus the FWHM of AMR obviously decreases (marked as arrow) and the MR ratio significantly increases. The solid lines are fitted by the equation (1).
