Figure 5
Scaling of square resistance for different electric fields and critical-exponent products for various gate sweeps.
Finite-size scaling analysis of electric field dependences of Ddensity-driven transition for the gate sweep 2, which yields the best collapse with v(z + 1) = 2.66 for I = 9–15 nA in (a) or v(z + 1) = 4.56 for I = 3–9 nA in (b). Inset of (a), bias current dependence of Rsq at different doping levels (Ddensity, from 0 to −0.60 Vnm−1, in steps of 0.05 Vnm−1). Critical-exponent products vz and v(z + 1) evaluated at various critical points for (c) the classical percolation regime and (d) the quantum percolation regime. Red lines represent average values. The characters ‘h’ and ‘e’ in the sweep indices stand for the hole and electron side, respectively.
