Figure 5
From: Ultraviolet Lasers Realized via Electrostatic Doping Method
EL spectra measured from the edge of the Au/MgO/ZnO structure.
In the measurement, |VGS| is set as −50 V and |IDS| varies from 0.1 to 2.5 mA. The emission spectrum of the device when |VGS| is set as zero and |IDS| as 2.5 mA is also illustrated in the figure and the inset shows the dependence of the integrated emission intensity recorded from the side of the device on |IDS|.
