Figure 3
From: Current-limiting challenges for all-spin logic devices
Calculation of spin transport efficiency Idet/Iinj of ASLD with graphene channel based on Eq. (2).
The default device geometry is (W, L) = (30 nm, 100 nm) and the other parameters of graphene are listed in Table 1. (a) Calculation of Idet/Iinj as a function of contact resistivity R1W and R2W. (b) Calculation of Idet/Iinj as a function of spin injection/detection efficiency P1 and P2. (c) Calculation of Idet/Iinj as a function of device geometry (W, L). (d) Calculation of Idet/Iinj as a function of diffusion length of graphene λG.
