Figure 5
From: Current-limiting challenges for all-spin logic devices
Analysis and optimization of injection current and energy based on contact resistance.
(a) Calculated injection current Iinj for switching time tsw = 2 ns, Iinj, tsw=2ns and input resistance Rin as a function of contact resistance R1 at different values of channel length for structure F1/T/G/F2. The dash line stands for the corresponding breakdown current density JBR, G. (b) Calculated energy for switching time tsw = 2 ns, Etsw=2ns as a function of contact resistance R1 at different values of channel length for structure F1/T/G/F2. (c) Calculated Iinj, tsw=2ns and Rin as a function of contact resistance R1 at different values of channel length for structure F1/T/Cu/F2. JBR, Cu is illustrated as dash line. (d) Calculated Etsw=2ns as a function of contact resistance R1 at different values of channel length for structure F1/T/Cu/F2.
