Figure 6
From: Current-limiting challenges for all-spin logic devices
Calculated injection current Iinj and energy for switching time tsw = 2 ns in different materials and structures considering the breakdown current density JBR. The transparent contact resistivity of copper channel is used as RiA = 0 and the other default parameters are listed in Table 1. (a,b) give the calculated dependence Iinj, tsw=2ns and Etsw=2ns on channel length L. (c,d) give the calculated dependence Iinj, tsw=2ns and Etsw=2ns on channel width W. (e,f) give the calculated dependence Iinj, tsw=2ns and Etsw=2ns on spin injection efficiency P1. (g,h) give the calculated dependence Iinj, tsw=2ns and Etsw=2ns on spin diffusion length λN.
