Table 1 Main parameters for Calculation.

From: Current-limiting challenges for all-spin logic devices

Parameter

Description

Default value

M s

Saturation magnetization

9.5 × 105 A/m

K

Perpendicular magnetic anisotropy energy density

6.4 × 105 J/m3

t F

Free layer thickness of output nano-magnet

2 nm

W, L ,t

Width, length and thickness of channel

10 nm, 20 nm, tG = 0.335 nm

AR, TR

Aspect Ratio L/W, t/W

2, 6/5 (copper)

A C

Nano-magnet area and contact area

10 × 10 nm2

αeff

Effective damping constant

0.007

N x , N y , N z

Demagnetization factors

0.17, 0.17, 0.66a

P

Spin polarization factor

0.5

P i

Spin injection (i = 1) or detection (i = 2) efficiency

50% (0 ~ 100%)

λG, λCu, λF

Spin diffusion length of graphene, copper and ferro nano-magnet

3 μm, 400 nm, 5 nm

ρCu,bulk, ρG, ρF

Resistivity of bulk copper, graphene channel and nano-magnet

1.7 μΩ· cm, 0.3 kΩb, 20 μΩ · cm

R i ·W

Contact resistivity for graphene channel in the input (i = 1) or the output (i = 2)

10 Ω · μm (Tunnel), 1 Ω · μm (Transparent)

R i ·A

Tunnel contact resistivity for copper channel

0.02 Ω · μm2

Constant

Description

Value

ħ

Reduced Planck constant

1.054 × 1034 J·s

e

Elementary charge

1.6 × 10−19 C

μ0

Vacuum permeability

1.2566 × 10−6 H/m

γ

Gyromagnetic ratio

1.76 × 1011 rad·s−1·T−1

  1. aCalculated from W and tF34.
  2. bNormalized by tG.