Figure 2
From: Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films

Reciprocal space mapping.
(a) Scans were obtained by aligning to the Al2O3
0 8) peak and scanning over the relative positions of the Bi2Te3
0 20) and
0 19) peaks for x = 0, 0.055, 0.113, 0.183 and 0.355 as indicated. For all samples, a misalignment of the substrate and film peaks in Qx is observed, as expected from an incoherent growth on Al2O3. (b) Lattice constants and unit cell volume as a function of Dy doping concentration. From top to bottom: in-plane lattice parameter (a-axis), out-of-plane lattice parameter (c-axis) and unit cell volume V determined from the RSM
0 20) peak positions.