Figure 3
Suspended nano- to macro-scale SWCNT architectures and other capabilities.
(a) SEM image of 500 nm-wide SWCNT network suspended on Si nano-lines (x = 300 nm, y = 600 nm and z = 200 nm). (b) SEM image of macroscale SWCNT film with alternating thick (white) and thin (white and gray) layer suspended on micro-pillars patterned PDMS substrate. (c) SEM image of suspended SWCNT suspended with the controlled angle over square-shaped micro-pillars. SEM images of SWCNT micro-arches formed after releasing the pre-stretched PDMS substrate: over 12 μm trench (d) and 54 μm trench (e), respectively. (f) Device level integration of suspended SWCNT micro-lines (6 μm in width) on SU-8 substrate (with 6 μm wide trench) with Au contact pad (100 × 100 μm2). Au contact pads were deposited on SU-8 substrate before transferring SWCNT micro-lines. (g) Optical microscopy image of all-SWCNT devices obtained by multiple transferring of different SWCNT structures: arrays of micro-lines (6 μm in width) and square pads (100 × 100 μm2). Scalar bars: (a) 1 μm; (b) 10 μm; (c) 20 μm; (d,e) 2 μm; (f) 40 μm and (g) 20 μm.
