Figure 5
From: Electrical level of defects in single-layer two-dimensional TiO2

Fabrication of titania ultrathin films.
SE was used to measure the ellipsometric parameters of single-layer TiO2 films on SiO2/Si wafers.
From: Electrical level of defects in single-layer two-dimensional TiO2

Fabrication of titania ultrathin films.
SE was used to measure the ellipsometric parameters of single-layer TiO2 films on SiO2/Si wafers.