Figure 1 | Scientific Reports

Figure 1

From: Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode

Figure 1

(a) A Pt-, Au-, Ni- and TiN-BE, which were used only for reset and another common Pt-BE, which was used only for forming and set, were formed on the same substrate. (b) Schematics explaining that the ReRAM cell is formed at the contact area between the cantilever and the BE. (c) A Ti- and Pt-BE, which were used only for reset and another common Pt-BE, which was used only for forming and set, were formed on the same substrate.

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