Figure 6
Simulated temperature distribution in Pt/NiO/Pt stack structures with (a) large (10 μm in diameter) and (b) small (100 nm in diameter) area, respectively, at 1.01 V during application of a voltage pulse with the rise time of 2 μs and the pulse height of 1.20 V. A filament consisting of VO’s with the radius of 10 nm is located at the center before the voltage application in both large and small structures. nV distribution in (c) large and (d) small structures for the temperature distributions (a) and (b), respectively.
