Figure 1 | Scientific Reports

Figure 1

From: Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

Figure 1

(a) Grazing angle incidence X-ray diffraction patterns and (b) current versus applied voltage plots of as-deposited, 400 oC annealed and 500 oC annealed STO films on Pt/TiO2/SiO2/Si substrate. TiN and Pt layers were deposited sequentially on STO layer for top electrode in (b). The inset figure in (b) shows the URS set (compliance current: 0.5mA) and reset switching curves of the as-deposited and 500 oC annealed STO films.

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