Figure 3: Plots of ln(IPCE × hv) as a function of ln(hv − ESB) and power factor α. | Scientific Reports

Figure 3: Plots of ln(IPCE × hv) as a function of ln(hv − ESB) and power factor α.

From: Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

Figure 3: Plots of ln(IPCE × hv) as a function of ln(hv − ESB) and power factor α.

Plots of ln(IPCE × hv) as a function of ln(hv − ESB) in (a) a 10 nm–thick Au film/TiO2 diode and (b) a graphene/TiO2 diode. The slope in the visible wavelength represents the exponent α in Fowler’s law (i.e. the slope in ln(IPCE × hv) vs. ln(hv − ESB)). (c) Plots of ln(IPCE × hv) as a function of ln(hv − ESB) in the graphene/TiO2 diodes exhibiting band-to-band excitation behavior (above 2.9 eV) in the TiO2 layer. (d) The exponent α in Fowler’s law obtained from (a,b).

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