Figure 3

Phosphorescence PLED device and emission mechanisms and performance.
Schematic diagram of (a) the charge trapping route for the Si(doTPA) and bipolar hosts under electroexcitation and (b) the energy level diagram of the materials used. The performance characteristics of (c) current density and brightness versus applied voltage and (d) luminance efficiency versus brightness of the devices with different Si-diphenylene polymers. The device structure is Cl-ITO/σ-π conjugated polymers: 8 wt% Ir-G (90 nm)/TPBI (65 nm)/CsF (1 nm)/Al.