Figure 8
Sheet electron concentration and mobility of the AlN/GaN heterojunction, where the AlN layer was treated with the in-situ ALA with different plasma time of 0, 10, 20, and 40 sec.
Figure 8 | Scientific Reports
Sheet electron concentration and mobility of the AlN/GaN heterojunction, where the AlN layer was treated with the in-situ ALA with different plasma time of 0, 10, 20, and 40 sec.
