Figure 2: ID-VG characteristics of 90 nm Ge-dot p-PTs (Wg/Lg = 70 μm/3 μm) with tox = 38.5 nm under variable-power 850 nm illumination from 0.006–87.5 μW. | Scientific Reports

Figure 2: ID-VG characteristics of 90 nm Ge-dot p-PTs (Wg/Lg = 70 μm/3 μm) with tox = 38.5 nm under variable-power 850 nm illumination from 0.006–87.5 μW.

From: High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Figure 2

Large photocurrent enhancement was achieved for our Ge-dot PTs when electrically-biased in the ON- and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively.

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