Figure 3 | Scientific Reports

Figure 3

From: High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Figure 3

ID-VD characteristics observed for 50 nm Ge-dot p-PTs with tox = 3.5 nm under variable-power (a) 1310 nm and (b) 1550 nm illumination. Distinct current enhancement was achieved for Ge-dot p-PTs when electrically-biased in the ON-state (VG = −2.5 V) and OFF-state (VG = +0.5 V). For illumination with wavelength greater than 1100 nm, the photon energy is insufficient to excite electron-hole pairs within Si substrate. The observed photocurrent enhancement indicates tremendous photocarrier generation within the Ge dots.

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