Figure 4: Dependence of photoresponsivity () on gate voltage and light power. | Scientific Reports

Figure 4: Dependence of photoresponsivity () on gate voltage and light power.

From: High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Figure 4

(a) 50–90 nm-diameter Ge-dot p-PTs with tox = 3.5 nm and 38.5 nm under 6 nW, 850 nm illumination. The is well modulated by gate voltage and the ON-OFF photoresponsivity ratio is improved by increasing Ge-dot diameter from 50 nm to 90 nm and by decreasing tox from 38.5 nm to 3.5 nm. (b) 90 nm Ge-dot p-PT with tox = 3.5 nm under variable-power 850 nm illumination from 6 nW–87 μW. OFF exhibits a superior photocurrent linearity for PIN in the range from 6 nW–1 mW, while ON decreases with increasing PIN and approaches a saturation value of 10 A/W at PIN ≥ 8.7 μW.

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