Figure 5
Power-dependent photoresponsivity of 50–90 nm Ge-dot p-PTs with tox = 3.5 nm under (a) 850 nm and (b) 1310 nm, 1550 nm illumination. Our Ge-dot PTs exhibit power dependent 
ON with the largest 
ON obtained for the sub-μW illumination regime for 850 nm–1550 nm wavelengths. The decrease of 
ON with increasing PIN can be fitted by a power law of 
ON ∝ PINβ with β = −0.7 – −0.9. The dashed lines are fitting curves and the circle symbols are experimental data.
