Figure 7
Size-dependent normalized photoresponsivity per unit Ge volume and internal quantum efficiency (IQE) for Ge-dot p-PTs with tox = 3.5 nm measured under (a) PIN = 6 nW and (b) PIN = 87.5 μW. Decreasing the Ge-dot diameter from 90 nm to 50 nm significantly enhances the normalized photoresponsivity and IQE possibly due to an improvement in crystallinity quality with reduced defect densities.
