Figure 3
From: Quantitative strain analysis of InAs/GaAs quantum dot materials
High resolution HAADF STEM images of QDs from the AlAs capped sample, (a and e), and the GaAs capped sample, (c). The QDs shown in (a and e) are the two dots labelled 2 and 5, respectively, in Fig. 1(c). Figure (b,d and f) show strain maps for strain parallel to the crystallographic [001] direction. Quantitative values for the strain along a line crossing through the middle of the QDs are given in Fig. 3(g). Zero strain is defined in an unstrained GaAs region away from any QD, and distance ”0” set at the interface between the QD and the GaAs matrix below.
