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Showing 1–14 of 14 results

Advanced filters: Author: B. Dieny Clear advanced filters

Second order anisotropy contribution in perpendicular magnetic tunnel junctions

A. A. Timopheev
R. Sousa
B. Dieny
ResearchOpen Access01 Jun 2016
Scientific Reports

Volume: 6, P: 1-12
Large low-field magnetoresistance in La_0.7Ca_0.3MnO₃ induced by artificial grain boundaries

N. D. Mathur
G. Burnell
M. G. Blamire
Research15 May 1997
Nature

Volume: 387, P: 266-268
Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

H. M. Yau
Z. B. Yan
J. Y. Dai
ResearchOpen Access04 Aug 2015
Scientific Reports

Volume: 5, P: 1-8
Microwave amplification in a magnetic tunnel junction induced by heat-to-spin conversion at the nanoscale

Joule heating in a d.c. biased magnetic tunnel junction provides giant spin torque which amplifies an electric microwave applied to the device.

Minori Goto
Yosuke Wakatake
Yoshishige Suzuki
Research26 Nov 2018
Nature Nanotechnology

Volume: 14, P: 40-43
Spin-torque oscillator using a perpendicular polarizer and a planar free layer

D. Houssameddine
U. Ebels
B. Dieny
Research29 Apr 2007
Nature Materials

Volume: 6, P: 447-453
Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

L. Avilés-Félix
A. Olivier
I. L. Prejbeanu
ResearchOpen Access23 Mar 2020
Scientific Reports

Volume: 10, P: 1-8
Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies

Isidoro Martínez
Coriolan Tiusan
Farkhad G. Aliev
ResearchOpen Access21 Jun 2018
Scientific Reports

Volume: 8, P: 1-11
Two-dimensional materials prospects for non-volatile spintronic memories

Developments, challenges and opportunities in using two-dimensional materials for the next generation of non-volatile spin-based memory technologies are reviewed, and possible disruptive improvements are discussed.

Hyunsoo Yang
Sergio O. Valenzuela
Stephan Roche
Reviews22 Jun 2022
Nature

Volume: 606, P: 663-673
Opportunities and challenges for spintronics in the microelectronics industry

This Review Article examines the potential of spintronics in four key areas of application —memories, sensors, microwave devices, and logic devices — and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.

B. Dieny
I. L. Prejbeanu
P. Bortolotti
Reviews18 Aug 2020
Nature Electronics

Volume: 3, P: 446-459
Magneto-mechanically actuated microstructures to efficiently prevent bacterial biofilm formation

S. Leulmi Pichot
H. Joisten
R. P. Cowburn
ResearchOpen Access22 Sept 2020
Scientific Reports

Volume: 10, P: 1-12
All-optical spin switching probability in [Tb/Co] multilayers

L. Avilés-Félix
L. Farcis
L. D. Buda-Prejbeanu
ResearchOpen Access22 Mar 2021
Scientific Reports

Volume: 11, P: 1-9
Mutual synchronization of spin-torque oscillators within a ring array

M. A. Castro
D. Mancilla-Almonacid
U. Ebels
ResearchOpen Access14 Jul 2022
Scientific Reports

Volume: 12, P: 1-8
Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

Roxana-Alina One
Hélène Béa
Coriolan Tiusan
ResearchOpen Access22 Apr 2021
Scientific Reports

Volume: 11, P: 1-11
A prospective epidemiological study of new incident GISTs during two consecutive years in Rhône Alpes region: incidence and molecular distribution of GIST in a European region

P A Cassier
F Ducimetière
I Ray-Coquard
ResearchOpen Access29 Jun 2010
British Journal of Cancer

Volume: 103, P: 165-170