Oxide-based memristors hold potential for energy-efficient neuromorphic hardware in ‘Internet of Things’ applications, yet optimizing performance with CMOS-compatible low-temperature fabrication is challenging. Here, the authors employ a dual-function electrode strategy using an oxygen vacancy reservoir in an ITO/WO₃/TiN system, achieving enhanced memristive and synaptic performance, paving the way for advanced neuromorphic applications.
- Ziyi Yuan
- Babak Bakhit
- Judith Louise MacManus-Driscoll