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Showing 1–8 of 8 results
Advanced filters: Author: Cezar B. Zota Clear advanced filters

  • Multifold fermions promise a solid-state platform for accessing and studying the effects of the chiral anomaly beyond Weyl fermions. Here, the authors identify multifold fermions in magnetotransport in the chiral semimetal CoSi.

    • Federico Balduini
    • Alan Molinari
    • Bernd Gotsmann
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-7

  • L. Rocchino et al. experimentally demonstrate a magnetic field effect transistor based on the Weyl semimetal NbP as the active channel material. A gate magnetic field is generated by current flowing in an integrated superconductor NbN. The device operation relies on the extreme magnetoresistance of the NbP.

    • Lorenzo Rocchino
    • Federico Balduini
    • Cezar B. Zota
    ResearchOpen Access
    Nature Communications
    Volume: 15, P: 1-8

  • InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal–oxide–semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power logic systems.

    • Clarissa Convertino
    • Cezar B. Zota
    • Kirsten E. Moselund
    Research
    Nature Electronics
    Volume: 4, P: 162-170

  • Miniaturization of silicon transistors requires interconnects that can maintain low electrical resistivity. Here, resistivity is studied in anisotropic NbP as a function of crystal orientation as its size approaches the electron scattering length.

    • Gianluca Mariani
    • Federico Balduini
    • Bernd Gotsmann
    ResearchOpen Access
    Communications Materials
    Volume: 6, P: 1-7

  • This Perspective examines the performance advantages and challenges of operating complementary metal–oxide–semiconductor (CMOS) devices at cryogenic temperatures.

    • Cezar Zota
    • Alberto Ferraris
    • Effendi Leobandung
    Reviews
    Nature Electronics
    Volume: 7, P: 966-974

  • Alberto Ferraris and colleagues demonstrate a cryogenic circuit with a InGaAs-based quantum well transistors integrated with capacitors for the application of quantum computers. This system improves over Si CMOS by superior properties at cryogenic temperature and with a lower voltage supply, which is helpful to reduce the power consumption in the qubit control applications.

    • Alberto Ferraris
    • Eunjung Cha
    • Cezar B. Zota
    ResearchOpen Access
    Communications Engineering
    Volume: 3, P: 1-7