ZrO2-based antiferroelectric materials hold promise for nanoelectronics due to their superior endurance, yet their performance in dynamic random-access memory remains limited by polarization fatigue. Here, the authors decouple fatigue mechanisms and introduce a static self-recovery method, significantly enhancing endurance and offering a pathway to high-endurance, energy-efficient memory technologies.
- Haoji Qian
- Rongzong Shen
- Genquan Han
