Nature Search

Wafer-scale monolayer dielectric integration on atomically thin semiconductors

Wafer-scale monolayer MoO₃ enables the integration of dielectrics with ultralow capacitance equivalent thickness on atomically thin semiconductors, achieving high yield and effective operation of n-type and p-type top-gated transistors.

Zhenzhen Shen
Haoqi Wu
Peng Zhou
Research12 Jan 2026
Nature Materials

P: 1-8
A scalable integration process for ultrafast two-dimensional flash memory

A scalable integration process for ultrafast two-dimensional flash memory can be used to integrate 1,024 devices with a yield of over 98%. The channel length of the devices could also be scaled down to sub-10 nm.

Yongbo Jiang
Chunsen Liu
Peng Zhou
Research12 Aug 2024
Nature Electronics

Volume: 7, P: 868-875
A full-featured 2D flash chip enabled by system integration

A full-featured 2D NOR flash memory chip realized by an atomic device to chip technology combines a superior 2D electronic device as a memory core and a powerful CMOS platform to support complex instruction control.

Chunsen Liu
Yongbo Jiang
Peng Zhou
ResearchOpen Access08 Oct 2025
Nature

Volume: 646, P: 1081-1088
Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

A two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism that supports both electron and hole injection is used to make devices with a subnanosecond program speed.

Yutong Xiang
Chong Wang
Peng Zhou
ResearchOpen Access16 Apr 2025
Nature

Volume: 641, P: 90-97
An application-specific image processing array based on WSe₂ transistors with electrically switchable logic functions

Reducing circuit redundancy represents a priority for the scalability of parallel computing hardware. Here, the authors report the realization of pixel processing units consisting of single 2D WSe₂ transistors implementing electrically-switchable logic functions. This strategy enables the fabrication of an image processing array with ~16% transistor consumption compared to traditional circuits.

Senfeng Zeng
Chunsen Liu
Peng Zhou
ResearchOpen Access10 Jan 2022
Nature Communications

Volume: 13, P: 1-9
Logic gates based on neuristors made from two-dimensional materials

By using two-dimensional materials with different polarities, single neuristors can act as XNOR, NOR, OR and AND logic gates.

Huawei Chen
Xiaoyong Xue
Peng Zhou
Research07 Jun 2021
Nature Electronics

Volume: 4, P: 399-404
An ultrafast bipolar flash memory for self-activated in-memory computing

A flash memory device fabricated with atomically sharp van der Waals heterostructures shows a programming speed of 20–30 ns and power consumption in the nanowatt region.

Xiaohe Huang
Chunsen Liu
Peng Zhou
Research20 Mar 2023
Nature Nanotechnology

Volume: 18, P: 486-492
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

A new quasi-non-volatile 2D semi-floating gate memory with high speed and long refresh time could bridge the gap between volatile and non-volatile memory technologies.

Chunsen Liu
Xiao Yan
Peng Zhou
Research09 Apr 2018
Nature Nanotechnology

Volume: 13, P: 404-410
Neuromorphic electro-stimulation based on atomically thin semiconductor for damage-free inflammation inhibition

Bao et al. report a neuromorphic bionic electro-stimulation solution based on atomic-scale semiconductor floating-gate memory circuit, which enables efficient inhibition of acute inflammation with low stimulation currents that are damage-free to neurons.

Rong Bao
Shuiyuan Wang
Shen Liu
ResearchOpen Access13 Feb 2024
Nature Communications

Volume: 15, P: 1-13
Small footprint transistor architecture for photoswitching logic and in situ memory

The atomic thickness of two-dimensional materials enables the realization of a small footprint transistor architecture for photoswitching logic computing in a single cell.

Chunsen Liu
Huawei Chen
Peng Zhou
Research27 May 2019
Nature Nanotechnology

Volume: 14, P: 662-667
Channel and contact length scaling of two-dimensional transistors using composite metal electrodes

The channel and contact lengths of monolayer molybdenum disulfide field-effect transistors can be scaled to 30 nm using metal composite contacts that reduce the current crowding phenomenon.

Sifan Chen
Shuiyuan Wang
Peng Zhou
Research12 May 2025
Nature Electronics

Volume: 8, P: 394-402
Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition

The authors create a rippled-assisted optoelectronic array (18 × 18 pixels) for the all-day motion detection and recognition, possessing negative and positive optical detection as well as memory and computation capabilities.

Xingchen Pang
Yang Wang
Peng Zhou
ResearchOpen Access22 Feb 2024
Nature Communications

Volume: 15, P: 1-9
Non-volatile 2D MoS₂/black phosphorus heterojunction photodiodes in the near- to mid-infrared region

In-sensor computing architectures can provide energy-efficient multifunctional capabilities, but their application to the mid-infrared range is challenging. Here, the authors report the realization of non-volatile MoS₂/black phosphorus photovoltaic detectors, integrating near- to mid-infrared photodetection, memory and computing functionalities.

Yuyan Zhu
Yang Wang
Peng Zhou
ResearchOpen Access17 Jul 2024
Nature Communications

Volume: 15, P: 1-10
Study of rheological parameters due to coal particle size change in pipeline transported coal slurry

Li-an Zhao
Chunsen Jian
Peng He
ResearchOpen Access26 Nov 2024
Scientific Reports

Volume: 14, P: 1-12
All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition

A retina-inspired two-dimensional material based retinomorphic device exhibits all-in-one perception, memory and computing capabilities for motion detection and recognition.

Zhenhan Zhang
Shuiyuan Wang
Peng Zhou
Research08 Nov 2021
Nature Nanotechnology

Volume: 17, P: 27-32
Two-dimensional materials for next-generation computing technologies

This Review discusses the recent progress and future prospects of two-dimensional materials for next-generation nanoelectronics.

Chunsen Liu
Huawei Chen
Peng Zhou
Reviews09 Jul 2020
Nature Nanotechnology

Volume: 15, P: 545-557
Correction: Decoy-PROTAC for specific degradation of “Undruggable” STAT3 transcription factor

Shiqing Li
Xin Wang
Huanghao Yang
Amendments and CorrectionsOpen Access23 Jul 2025
Cell Death & Disease

Volume: 16, P: 1-4
Transistor engineering based on 2D materials in the post-silicon era

This Review systematically compares 2DMs and silicon metal–oxide–semiconductor field-effect transistors technologies in the integrated circuits engineering process and presents potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device at the advanced tech node.

Senfeng Zeng
Chunsen Liu
Peng Zhou
Reviews30 Apr 2024
Nature Reviews Electrical Engineering

Volume: 1, P: 335-348
Ultrafast non-volatile flash memory based on van der Waals heterostructures

MoS₂/hBN/graphene van der Waals heterostructures with a clean interface and optimized barrier height and gate coupling ratio enable the realization of ultrafast non-volatile flash memory.

Lan Liu
Chunsen Liu
Peng Zhou
Research03 Jun 2021
Nature Nanotechnology

Volume: 16, P: 874-881
Bisulfite-free direct detection of 5-methylcytosine and 5-hydroxymethylcytosine at base resolution

A new method using mild chemical reactions and enzymatic oxidation allows nondestructive sequencing of 5-methylcytosine and 5-hydroxymethylcytosine with base-level resolution.

Yibin Liu
Paulina Siejka-Zielińska
Chun-Xiao Song
Research25 Feb 2019
Nature Biotechnology

Volume: 37, P: 424-429
Decoy-PROTAC for specific degradation of “Undruggable” STAT3 transcription factor

Shiqing Li
Xin Wang
Huanghao Yang
ResearchOpen Access21 Mar 2025
Cell Death & Disease

Volume: 16, P: 1-14
2D semiconductors for specific electronic applications: from device to system

Xiaohe Huang
Chunsen Liu
Peng Zhou
ReviewsOpen Access01 Aug 2022
npj 2D Materials and Applications

Volume: 6, P: 1-19

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