By using 2D materials heterostructures it is possible to exploit the properties of both materials at the interface, for instance, spin-dependent transport for application in spintronic devices. Here, using a heterostructure of MoTe2/Graphene the authors demonstrate a proximity induced spin-galvanic effect which can be controlled by the gate voltage.
- Anamul Md. Hoque
- Dmitrii Khokhriakov
- Saroj P. Dash
