In the standard Si transistor gate stack, replacing conventional dielectric HfO2 with an ultrathin ferroelectricāantiferroelectric HfO2āZrO2 heterostructure exhibiting the negative capacitance effect demonstrates ultrahigh capacitance without degradation in leakage and mobility, promising for ferroelectric integration into advanced logic technology.
- Suraj S. Cheema
- Nirmaan Shanker
- Sayeef Salahuddin
