Kong et al. report 1-nm-thick epitaxial AlN passivation for 1.5-µm-diameter InGaN red micro-LEDs by Ar plasma assisted atomic layer deposition, resulting in an efficiency of 6.5% at 649 nm. A near-complete device transfer to polyimide substrates further enables high-resolution flexible micro-LEDs.
- Kiho Kong
- Jun Hee Choi
- Miyoung Kim