The potential energy efficiency of impact ionization field-effect transistors (I2FETs) is usually limited by stringent operational conditions. Here, the authors report I2FETs based on 2D WSe2, showing average subthreshold slopes down to 2.3 mV/dec and on/off ratios of ~106 at room temperature and bias voltages <1 V.
- Haeju Choi
- Jinshu Li
- Sungjoo Lee
