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Showing 1–4 of 4 results
Advanced filters: Author: Evangelos Papalazarou Clear advanced filters

  • Stacking layers from different van der Waals materials can enable rotational symmetry breaking and engineering of the electronic band structure. Here, the authors report the observation of the creation of anisotropic minigaps and the appearance of flat bands at the valence band maximum in monolayer MoS2-black phosphorus heterojunctions.

    • Zailan Zhang
    • Alberto Zobelli
    • Zhesheng Chen
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-8

  • The ability to gather experimental access to the kinetics of charge carriers is central in semiconductor physics. The authors utilize hard x-ray radiation from a synchrotron source to probe the charge transfer dynamics in the attosecond regime in layered GeSe, thus providing crucial information for future photonic and optoelectronic devices.

    • Zhesheng Chen
    • Heqi Xiong
    • Jean-Pascal Rueff
    ResearchOpen Access
    Communications Physics
    Volume: 4, P: 1-6

  • Defects in solids may introduce additional charges that influence the overall charge transport behaviour. Here, Zhao et al. use swift electron beams to compensate charge defects, which effectively tune Bi2Te3 and Bi2Se3 from p-type to n-type while preserving their topological properties.

    • Lukas Zhao
    • Marcin Konczykowski
    • Lia Krusin-Elbaum
    ResearchOpen Access
    Nature Communications
    Volume: 7, P: 1-7

  • Future spintronic devices may exploit spin-orbit interactions, which often emerge from broken symmetries and strongly influence electronic behaviour. Here, the authors evidence the amplification of Rashba coupling by a crystal field that breaks the local inversion symmetry at the Ni site in BaNiS2.

    • David Santos-Cottin
    • Michele Casula
    • Andrea Gauzzi
    ResearchOpen Access
    Nature Communications
    Volume: 7, P: 1-8