Knowledge about strain at the nanoscale is essential for tailoring the mechanical and electronic properties of materials. It has now been shown that infrared near-field microscopy can provide direct, non-invasive mapping of residual strain fields, with nanoscale resolution. In addition, plasmon-assisted near-field imaging of free-carrier properties in nanoscale strain fields has been demonstrated.
- A. J. Huber
- A. Ziegler
- R. Hillenbrand
