Ovonic threshold switching between high-resistive and conductive states in chalcogenide alloys is crucial for phase change memories and selector elements, yet its voltage dependence on field polarity remains underexplored. Here, the authors elucidate this phenomenon using electrical measurements, numerical simulations based on Technology Computer Aided Design, and DFT calculations, proposing a Graded Band Gap model that enhances memory design by predicting programming window characteristics.
- Paolo Fantini
- Andrea Ghetti
- Roberto Bez