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Showing 1–2 of 2 results
Advanced filters: Author: Fuxi Liao Clear advanced filters

  • High-density dynamic random access memory is crucial for addressing the memory wall issue, yet its three-dimensional integration faces significant challenges. Liao et al. utilize a single-step self-aligned integration scheme, achieving 4 F² density and demonstrating 4-bit operation.

    • Fuxi Liao
    • Zhengyong Zhu
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 16, P: 1-9

  • Thin film transistors with high voltage gains and operating frequencies are required for internet of things applications. Here, the authors report short-channel source-gated transistors based on monolayer MoS2, showing intrinsic gain exceeding 2.4×10³ and cutoff frequencies up to 208 MHz in the subthreshold regime.

    • Menggan Liu
    • Jiebin Niu
    • Ming Liu
    ResearchOpen Access
    Nature Communications
    Volume: 17, P: 1-10