Charge carrier modulation in graphene by proximate ferroelectricity has attracted much attention, but it was rarely successful especially for oxide ferroelectrics mainly due to uncontrolled interfacial charge traps. In this work, the device operation of field–effect transistor comprising of graphene and ferroelectric single-crystal Pb(Mg1/3Nb2/3)O3–PbTiO3 was carefully analyzed for studying the direct or indirect coupling phenomena between charge carriers in graphene and nearby ferroelectricity.
- Nahee Park
- Hyunkyung Lee
- Dongseok Suh
