Centimeter-sized, epitaxial hexagonal boron nitride (h-BN) few-layer films were heteroepitaxially grown on Ni(111) single-crystal substrates using atmospheric pressure chemical vapor deposition with ammonia-borane single precursor. The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and the remaining Ni(111) substrates were repeatedly re-used. Over repeated growth and transfer after the initial annealing, no significant degradation of Ni(111) substrates was observed and the crystallinity of h-BN layers was reproduced reliably. The grown h-BN films showed typical physical characteristics of h-BN, with a high uniformity over a wide area. The large-area synthesis and transfer of atomically thin uniform epitaxial h-BN layers can be applied in various fields where high quality two-dimensional insulating layers are required.
- Hongseok Oh
- Janghyun Jo
- Gyu-Chul Yi
