We demonstrate intracellular GaN microrod lasers for cell labeling applications. GaN microrods show excellent lasing signals under intracellular conditions with a low lasing threshold (~270 kW/cm2). The lasing spectra from individual intracellular microrods are distinguishable because each GaN microrod has different lasing peak wavelength, mode spacings, and relative PL intensities. This result suggests that GaN microrods can be candidates for cell labeling applications.
- Minho S. Song
- Hyeonjun Baek
- Gyu-Chul Yi
