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Showing 1–3 of 3 results
Advanced filters: Author: Jason Britson Clear advanced filters

  • The electromechanical response of thin film ferroelectric devices is considerably influenced by ferroelastic domains. Here, the authors observe that these ferroeleastic domains can be stabilized by dislocations, providing feedback for a better control over the properties of these devices.

    • Peng Gao
    • Jason Britson
    • Xiaoqing Pan
    Research
    Nature Communications
    Volume: 5, P: 1-8

  • In ferroelectric thin films, ferroelastic domains affect the features of polarization switching. Gao et al.perform real-time transmission electron microscopy measurements and show that ferroelastic domains can hinder the switching via formation of a transient interface layer with a dipole glass structure.

    • Peng Gao
    • Jason Britson
    • Xiaoqing Pan
    Research
    Nature Communications
    Volume: 4, P: 1-9

  • The controlled creation of one-dimensional conductive channels at the cores of topological defects in the multiferroic material BiFeO3 demonstrates that such defects can drive metal–insulator phase transitions, and might provide a route towards high-density information storage.

    • Nina Balke
    • Benjamin Winchester
    • Sergei V. Kalinin
    Research
    Nature Physics
    Volume: 8, P: 81-88