Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a modulation bandwidth beyond 33 GHz and with data rates of 40 Gbps.
- Koen Alexander
- John P. George
- Jeroen Beeckman
